| 摘要 |
一种薄膜电晶体，包含闸极、源极、汲极、闸绝缘层以及氧化物半导体层。氧化物半导体层包含铟镓锌氧化物，其化学式为InxGayZnzOw，其中x、y及z满足数学式：1.5≦(y/x)≦2以及1.5≦(y/z)≦2。闸绝缘层位于闸极与氧化物半导体层之间。源极和汲极分别连接氧化物半导体层之不同两侧。 Disclosed herein is a thin file transistor, which includes a gate electrode, a source electrode, a drain electrode, a gate-insulating layer, and an oxide semiconductor layer. The oxide semiconductor layer includes indium-gallium-zinc oxide with a chemical formula of InxGayZnzOw, in which x, y and z satisfy the following formulas:1.5 ≦ (y/x) ≦ 2and1.5 ≦ (y/z) ≦ |
