发明名称 半导体装置及其制法与半导体结构;SEMICONDUCTOR DEVICE AS WELL AS MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR STRUCTURE
摘要 一种半导体装置及其制法与半导体结构,该半导体装置包括:具有相邻之二连接垫之基板;半导体元件,系具有对应于各该连接垫之焊垫与形成于该些焊垫上之凸块底下金属层;具有依序形成于该凸块底下金属层上之第一导电部与第二导电部之导电元件,其中,该第二导电部之宽度系小于该第一导电部之宽度;以及形成于该第二导电部与该连接垫之间的焊球,俾连接该导电元件与该基板。藉此,本发明能避免相邻之导电元件间产生焊料桥接之情形,并降低该导电元件与该凸块底下金属层间之应力。; a semiconductor component having solder pads corresponding to each of the connection pads and an under bump metal layer formed on the solder pads; a conductive element having a first conductive portion and a second conductive portion which are formed sequentially on the under bump metal layer, wherein the width of the second conductive portion is less than the width of the first conductive portion; and a solder ball formed between the second conductive portion and the connection pad so as to connect the conductive element and the substrate. Therefore the present invention can avoid solder bridging situation generated between the adjacent conductive elements, and lower the stress between the conductive element and the under bump metal layer.
申请公布号 TW201511200 申请公布日期 2015.03.16
申请号 TW102132162 申请日期 2013.09.06
申请人 矽品精密工业股份有限公司 SILICONWARE PRECISION INDUSTRIES CO., LTD. 发明人 林长甫 LIN, CHANG FU;姚进财 YAO, CHIN TSAI;张宏铭 CHANG, HUNG MING;庄旻锦 CHUANG, MIN CHIN;黄富堂 HUANG, FU TANG
分类号 H01L23/48(2006.01);H01L21/60(2006.01) 主分类号 H01L23/48(2006.01)
代理机构 代理人 陈昭诚
主权项
地址 台中市潭子区大丰路3段123号 TW