发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a low operating voltage and to provide a method of manufacturing the same.SOLUTION: There is provided a semiconductor device including an n-type semiconductor layer and a first metal layer. The n-type semiconductor layer contains a nitride semiconductor. The n-type semiconductor layer has a boron-containing region that contains boron combined with oxygen. The first metal layer is in contact with the boron-containing region. |
申请公布号 |
JP2015050395(A) |
申请公布日期 |
2015.03.16 |
申请号 |
JP20130182597 |
申请日期 |
2013.09.03 |
申请人 |
TOSHIBA CORP |
发明人 |
ITO TOSHIHIDE;TAJIMA JUNPEI;KATSUNO HIROSHI;NUNOUE SHINYA |
分类号 |
H01L21/28;H01L21/265;H01L21/338;H01L29/06;H01L29/207;H01L29/417;H01L29/778;H01L29/812;H01L33/32;H01L33/40 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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