发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having a low operating voltage and to provide a method of manufacturing the same.SOLUTION: There is provided a semiconductor device including an n-type semiconductor layer and a first metal layer. The n-type semiconductor layer contains a nitride semiconductor. The n-type semiconductor layer has a boron-containing region that contains boron combined with oxygen. The first metal layer is in contact with the boron-containing region.
申请公布号 JP2015050395(A) 申请公布日期 2015.03.16
申请号 JP20130182597 申请日期 2013.09.03
申请人 TOSHIBA CORP 发明人 ITO TOSHIHIDE;TAJIMA JUNPEI;KATSUNO HIROSHI;NUNOUE SHINYA
分类号 H01L21/28;H01L21/265;H01L21/338;H01L29/06;H01L29/207;H01L29/417;H01L29/778;H01L29/812;H01L33/32;H01L33/40 主分类号 H01L21/28
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