| 摘要 |
PROBLEM TO BE SOLVED: To achieve microfabrication of a transistor having a buried gate electrode.SOLUTION: A semiconductor device comprises: a gate electrode GE which is formed on a substrate SUB and extends in a direction parallel with a first side SID1 of a device formation region DFR, and crosses the device formation region DFR; and a plurality of buried gate electrodes BGE which are buried in the substrate SUB lying in the device formation region DFR and some of which overlaps the gate electrode GE in planar view, and which extend obliquely with respect to the first side of the device formation region DFR and are parallel with each other. Both of a first end of the buried gate electrode BGE, which is opposite to the first side SID1 and a second end of the buried gate electrode BGE, which is opposite to a second side SID2 of the device formation region DFR are parallel with the first side SID1. |
