发明名称 METHOD FOR CORRECTING DRAWING DATA, DRAWING METHOD, AND METHOD FOR MANUFACTURING MASK OR TEMPLATE FOR LITHOGRAPHY
摘要 PROBLEM TO BE SOLVED: To provide a method capable of obtaining a highly accurate drawing pattern.SOLUTION: In a method for correcting drawing data: a data table in which a combination of pattern resizing quantity, beam irradiation quantity and a back-scattering coefficient is regulated in each pattern size is prepared; layouts obtained by dividing a design layout into a plurality of layers in accordance with the pattern size are converted into drawing data; resizing processing for resizing a pattern of the design layout included in each layer on the basis of the pattern resizing quantity corresponding to the pattern size included in each layer is applied to the drawing data; and proximity effect correction is applied to the resized pattern included in each layer on the basis of the beam irradiation quantity and the back-scattering coefficient corresponding to the pattern size of the design layout included in each layer and the beam irradiation quantity and the back-scattering coefficient corresponding to the pattern size of the design layout included in a layer adjacent to each layer.
申请公布号 JP2015050439(A) 申请公布日期 2015.03.16
申请号 JP20130183499 申请日期 2013.09.04
申请人 TOSHIBA CORP 发明人 YAGAWA KEISUKE
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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