SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

摘要

The objective of the present invention is to provide a semiconductor device which has a thin film transistor with superior electrical properties by using an oxide semiconductor layer. To reduce contact resistance with a line layer made of a metallic material with a low electric resistance value by using an In-Sn-O based oxide semiconductor layer including SiOx in a channel region, a source region or a drain region is formed between a source electrode layer and a drain electrode layer and the In-Sn-O based oxide semiconductor layer including SiOx. The source region or the drain region, and a pixel region use an In-Sn-O based oxide semiconductor layer excluding SiOx of the same layer.