横向双扩散金氧半导体装置及其制造方法;LATERAL DOUBLE DIFFUSED METAL-OXIDE-SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

一种横向双扩散金氧半导体装置，包括：半导体基板，具有相对之一第一表面与一第二表面；井区，位于该半导体基板之一部内；闸极结构，位于该半导体基板之一部上；第一掺杂区，位于邻近该闸极结构之一第一侧之该井区层之一部内；一第二掺杂区，位于该闸极结构之一第二侧之该井区之一部内；第三掺杂区，位于该第一掺杂区之一部内；一第四掺杂区，位于该第二掺杂区之一部内；第一沟槽，位于该第三掺杂区、该第一掺杂区、该井区与该半导体基板之一部中；导电接触物，位于该第一沟槽内；第二沟槽，位于邻近该半导体基板之该第二表面之一部中；第一导电层，位于该第二沟槽内；以及第二导电层，位于该半导体基板之该第二表面以及该第一导电层上。; a well region in a portion of the semiconductor substrate; a gate structure disposed over a portion of the semiconductor substrate; a first doping region disposed in a portion of the well region from a first side of the gate structure; a second doping region disposed in a portion of the well region from a second side of the gate structure; a third doping region disposed in a portion of the first doping region; a fourth doping region disposed in a portion of the second doping region; a first trench formed in a portion of the third doping region, the first doping region, the well region and the semiconductor substrate; a conductive contact in the first trench; a second trench in a portion of the semiconductor substrate adjacent to the second surface thereof; a first conductive layer in the second trench; and a second conductive layer on the second surface of the semiconductor substrate and the first conductive layer.