| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor energy beam detection element capable of suppressing the generation of discharge.SOLUTION: A semiconductor energy beam detection element ED1 is provided with a semiconductor substrate 1 having a main surface 1a and a main surface 1b which face each other. The semiconductor substrate 1 has: a first semiconductor region 3 of a first conductivity type, which is positioned on the main surface 1a side; a second semiconductor region 5 of the first conductivity type, which is positioned on the main surface 1b side and has a higher concentration of impurity than the first semiconductor region 3; a third semiconductor region 7 of a second conductivity type, which is positioned on the main surface 1a side and constitutes an energy-beam-sensitive region together with the first semiconductor region 3; a fourth semiconductor region 9 of the second conductivity type, which is positioned so as to surround the region, in which the third semiconductor region 7 is positioned, on the main surface 1a side; and a fifth semiconductor region 11 of the second conductivity type, which is positioned so as to follow the outer periphery of the semiconductor substrate 1 on the main surface 1a side. |
