| 摘要 |
PROBLEM TO BE SOLVED: To provide a small optical element in which an area of an upper surface of a contact layer positioned at a top layer of the optical element is large even in a case where an etching rate of the contact layer is small.SOLUTION: An optical element includes a base board 2, a plurality of semiconductor layers 30 stacked on an upper surface of the base board 2, an electrode 31, and an insulating film 9. The plurality of semiconductor layers 30 include a plurality of one conductive type semiconductor layers and a plurality of inverse conductive type semiconductor layers. A top layer includes an inverse conductive type contact layer 30f containing a plurality of truncated pyramids 30fa, 30fb, and 30fc. An area that contacts to a lower bottom of other truncated pyramid positioned above one truncated pyramid, at an upper bottom of one truncated pyramid, among the plurality of truncated pyramids, is smaller than an area of a lower bottom of other truncated pyramid. The electrode 31 is connected on an upper surface of the inverse conductive type contact layer 30f, and through the insulating film 9, disposed on a side surface of the plurality of inverse conductive type semiconductor layers and the plurality of one conductive type semiconductor layers. |
