| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem of warpage of a group III nitride semiconductor and silicon, which is caused by a stress of the group III nitride semiconductor to the silicon.SOLUTION: A semiconductor device SD1a comprises a substrate SUB, a buffer layer BUF and a semiconductor layer SL. The semiconductor device comprises a trench TRC which is formed on a sixth surface F6 of the semiconductor layer SL, and pierces the semiconductor layer SL and the buffer layer BUF. The bottom of the trench TRC reaches at least the inside of the substrate SUB. |
