| 摘要 |
<p>PROBLEM TO BE SOLVED: To locally heat a metal at a predetermined temperature and time to be reached.SOLUTION: In a laser annealing device, a semiconductor laser element is used that generates laser light of a wavelength having a high absorbance rate into metal. While moving a movable stage 90 on which a work-piece 20 is loaded in XY direction, a line beam is formed on the work-piece 20, in a region that can be heated, by an optical system in which a minor width is 0.5-20μm and a major width is 6-200μm, being an oblong shape with a focal point depth of 2-4μm at a focal point position. Laser annealing is performed while controlling focal point, and a heating step is thus executed. On the work-piece 20 in a region that cannot be heated, the laser annealing device selectively outputs a lower laser power compared with a first laser power.</p> |
