发明名称 METHOD FOR MANUFACTURING PHOTOELECTRODE FOR QUANTUM DOT SENSITIZED SOLAR BATTERIES, AND QUANTUM DOT SENSITIZED SOLAR BATTERY
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a photoelectrode for quantum dot sensitized solar batteries by which a long-chain alkyl group which inevitably sticks to a quantum dot can be removed for a short time, and a photoelectrode arranged so that reverse electron transfer from a quantum dot can be suppressed can be manufactured with good productivity.SOLUTION: A method for manufacturing a photoelectrode for quantum dot sensitized solar batteries which is to be arranged opposite to a counter electrode through an electrolytic layer comprises the steps of: forming a transparent electrode layer 21 on a surface of a substrate 1; forming, on a surface of the transparent electrode layer 21, a semiconductor layer 22 which performs a photoelectric conversion; causing quantum dots 23 to be adsorbed onto a surface of the semiconductor layer by immersing the substrate in a fluid dispersion with the quantum dots distributed therein; substituting sulfur for ligands inevitably sticking to the quantum dots when causing the quantum dot adsorption by immersing the substrate in a liquid solution containing sulfide ions; and forming, on surfaces of the quantum dots and the semiconductor layer, a buffer layer 24 for preventing electrons from flowing into the electrolytic layer.
申请公布号 JP2015050204(A) 申请公布日期 2015.03.16
申请号 JP20130178627 申请日期 2013.08.29
申请人 ULVAC JAPAN LTD 发明人 NAGAKUBO JUNKI;NAGATA TOMOHIRO;MURAKAMI HIROHIKO
分类号 H01L31/06;H01L31/04;H01M14/00 主分类号 H01L31/06
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