发明名称 CHEMICAL MECHANICAL POLISHING PAD
摘要 PROBLEM TO BE SOLVED: To provide chemical mechanical polishing pads that exhibit an appropriate balance of properties that provides a degree of planarization while minimizing defect formation.SOLUTION: A chemical mechanical polishing pad comprises: a polishing layer 20; a rigid layer 25; and a hot melt adhesive 23 bonding the polishing layer to the rigid layer. The polishing layer exhibits: a specific gravity greater than 0.6; a Shore D hardness of 60 to 90; an elongation to break of 100 to 300%; and a unique combination of an initial hydrolytic stability and a sustained hydrolytic instability.
申请公布号 JP2015047691(A) 申请公布日期 2015.03.16
申请号 JP20140174664 申请日期 2014.08.29
申请人 ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC;DOW GLOBAL TECHNOLOGIES LLC 发明人 MICHELLE K JENSEN;QIAN BAINIAN;YEH FENGJI;MARTY DEGROOT;MOHAMMAD T ISLAM;MATTHEW RICHARD VAN HANEHEM;STRING DARRELL;JAMES MURNANE;JEFFREY JAMES HENDRON;JOHN G NOWLAND
分类号 B24B37/24;B24B37/22;C08G18/10;H01L21/304 主分类号 B24B37/24
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