发光二极体及其制造方法;LIGHT EMITTING DIODE AND METHOD OF PRODUCING THE SAME

摘要

一种发光二极体制造方法，包括以下步骤：提供一蓝宝石基板，蓝宝石基板的表面形成有多个凸出部；在蓝宝石基板的表面及凸出部生长一厚度均匀的未掺杂的低温GaN层；在未掺杂的低温GaN层上生长未掺杂的高温GaN层，露出凸出部的顶部的未掺杂的低温GaN层；在露出的未掺杂的低温GaN层上附着二氧化矽奈米球；继续生长未掺杂的高温GaN层直至覆盖二氧化矽奈米球；在未掺杂的高温GaN层上依次生长N型GaN层、活性层以及P型GaN层。; forming a low-temperature un-doped GaN layer with an uniform thickness on the sapphire substrate; forming a high-temperature un-doped GaN layer on the low-temperature un-doped GaN layer, the high-temperature un-doped GaN layer is not totally covering the low-temperature un-doped GaN layer on the protrusions and exposing part of the low-temperature un-doped GaN layer on the protrusions; locating SiO2 nanospheres on the low-temperature un-doped GaN layer on the protrusions; continuing to form the high-temperature un-doped GaN layer to cover the SiO2 nanospheres; and forming a n-type GaN layer, an active layer and a p-type GaN layer on the high-temperature un-doped GaN layer successively.