SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To easily form a semiconductor device including a plurality of capacitors having different characteristics respectively.SOLUTION: A capacity cell 60 includes: a first electrode 61 and a second electrode 62 which are formed on an interlayer insulating film 42; and a dielectric film 63 interposed between the first electrode 61 and the second electrode 62. A cell capacitor 50 includes a lower electrode 51, a ferroelectric 52 and an upper electrode 53 which are laminated. The film thickness of the ferroelectric 52 is set corresponding to reduced voltage of the working voltage of a memory cell. By setting a distance between the first electrode 61 and the second electrode 62, a capacity cell 60 having a capacity value that is set regardless of the film thickness of the dielectric film 63 can be obtained.