发明名称 |
STRUCTURES AND METHODS OF FORMATION OF CONTIGUOUS AND NON-CONTIGUOUS BASE REGIONS FOR HIGH EFFICIENCY BACK-CONTACT SOLAR CELLS |
摘要 |
<p>Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non-nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.</p> |
申请公布号 |
KR20150028782(A) |
申请公布日期 |
2015.03.16 |
申请号 |
KR20147036595 |
申请日期 |
2013.05.29 |
申请人 |
SOLEXEL, INC. |
发明人 |
DESHPANDE ANAND;KAPUR PAWAN;RANA VIRENDRA V.;MOSLEHI MEHRDAD M.;SEUTTER SEAN M.;DESHAZER HEATHER;KOMMERA SWAROOP;ANBALAGAN PRANAV;RATTLE BENJAMIN E.;COUTANT SOLENE |
分类号 |
H01L31/0224;H01L31/068 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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