| 摘要 |
<p>An organic thin film transistor substrate includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode to have a source-connecting portion and a drain-seating groove, a source electrode formed in the source-connecting portion, a drain electrode formed in the drain-seating groove and an organic semiconductor layer contacting the gate insulation layer, the source electrode and the drain electrode.</p> |
