半导体装置及其制造方法;SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

本揭露提供一种半导体装置，包括：导线，设于基板上；盖层，设于导线之顶面，盖层具有底面低于导线之顶面；第一介电层，设于盖层上；及导孔，接触盖层之顶面，导孔嵌入第一介电层中。本揭露亦提供此半导体装置之制造方法。; a capping layer on a top surface of the conductive line, the capping layer having a bottom surface lower than a top surface of the conductive line; a first dielectric layer over the capping layer; and a conductive via contacting a top surface of the capping layer, the conductive via being embedded in the first dielectric layer. The present disclosure also provides a method for manufacturing the semiconductor device.