<p>Disclosed is a method of growing a gallium nitride thin film. The method of growing the gallium nitride film includes the steps of preparing a substrate in a reaction chamber and growing a gallium nitride thin film doped with carbon on a substrate by injecting gas containing carbon dopant source and carbon containing species including a material different from that of the carbon dopant source.</p>
申请公布号
KR20150027998(A)
申请公布日期
2015.03.13
申请号
KR20130106528
申请日期
2013.09.05
申请人
KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION