发明名称 Growing Method of Gallium Nitride Film
摘要 <p>Disclosed is a method of growing a gallium nitride thin film. The method of growing the gallium nitride film includes the steps of preparing a substrate in a reaction chamber and growing a gallium nitride thin film doped with carbon on a substrate by injecting gas containing carbon dopant source and carbon containing species including a material different from that of the carbon dopant source.</p>
申请公布号 KR20150027998(A) 申请公布日期 2015.03.13
申请号 KR20130106528 申请日期 2013.09.05
申请人 KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION 发明人 LEE, JUNG HEE;MUN, JAE KYOUNG;JEON, SANG MIN;KANG, HEE SUNG;WON, CHUL HO;KIM, DONG SEOK
分类号 H01L21/20 主分类号 H01L21/20
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