| 摘要 |
The present invention relates to a flat panel display device with a pixel structure for an ultra high pixel density. A thin film transistor substrate for the flat panel display device according to the present invention includes rhomboidal sub pixels which are arranged on the substrate in a matrix method, a gate wire which is transversely arranged between an odd row and an even row of the sub pixels, an odd data wire which is arranged on the left side of the odd column of the sub pixels and an even data wire which is arranged on the right side of the even column of the sub pixels, an even column thin film transistor which is formed in an intersection of the gate wire and the odd data wire and is allocated in the even column sub pixel, an odd column thin film transistor which is formed in the intersection of the even data wire and the gate wire and is allocated in the odd column sub pixel and pixel electrodes which are formed in the sub pixels. |
