MEMORY CIRCUIT PROVIDED WITH BISTABLE CIRCUIT AND NON-VOLATILE ELEMENT

摘要

A memory circuit includes: a bistable circuit (30) that stores data; nonvolatile elements (MTJ1, MTJ2) that store data written in the bistable circuit in a nonvolatile manner, and restore data stored in a nonvolatile manner into the bistable circuit; and a control unit that stores data written in the bistable circuit in a nonvolatile manner and cuts off a power supply to the bistable circuit when the period not to read data from or write data into the bistable circuit is longer than a predetermined time period, and does not store data written in the bistable circuit in a nonvolatile manner and makes the supply voltage for the bistable circuit lower than a voltage during the period to read data from or write data into the bistable circuit when the period not to read or write data is shorter than the predetermined time period.

主权项

1. A memory circuit comprising:
a bistable circuit configured to write data; a nonvolatile element configured to store data written in the bistable circuit in a nonvolatile manner, and restore data stored in a nonvolatile manner into the bistable circuit; and a control unit configured to store data written in the bistable circuit into the nonvolatile element in a nonvolatile manner and cut off a power supply to the bistable circuit when a period not to read data from or write data into the bistable circuit is longer than a predetermined time period, and store no data written in the bistable circuit into the nonvolatile element in a nonvolatile manner and make a supply voltage for the bistable circuit lower than a voltage during a period to read data from or write data into the bistable circuit when the period not to read or write data is shorter than the predetermined time period.