发明名称 THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF
摘要 A thin film transistor array panel includes a first substrate, a gate line disposed on the first substrate and includes a lower layer including titanium, a middle layer including a transparent conductive material, and an upper layer including copper, a pixel electrode disposed on the first substrate and includes a lower layer including titanium, and an upper layer including the transparent conductive material, a gate insulating layer disposed on the gate line and the pixel electrode, a semiconductor layer disposed on the gate insulating layer, a data line and a drain electrode disposed on the semiconductor layer, a passivation layer which covers the data line and the drain electrode, and a common electrode disposed on the passivation layer.
申请公布号 US2015070612(A1) 申请公布日期 2015.03.12
申请号 US201414171986 申请日期 2014.02.04
申请人 Samsung Display Co., Ltd. 发明人 SEO O Sung;YIM Tae Kyung;KANG Hyun-Ho;KIM Hyung June
分类号 H01L27/12;G02F1/1362 主分类号 H01L27/12
代理机构 代理人
主权项 1. A thin film transistor array panel comprising: a first substrate; a gate line which is disposed on the first substrate and includes: a lower layer including titanium;a middle layer including a transparent conductive material; andan upper layer including copper, a pixel electrode which is disposed on the first substrate and includes: a lower layer including titanium; andan upper layer including the transparent conductive material, a gate insulating layer disposed on the gate line and the pixel electrode; a semiconductor layer disposed on the gate insulating layer; a data line and a drain electrode disposed on the semiconductor layer; a passivation layer which covers the data line and the drain electrode; and a common electrode disposed on the passivation layer
地址 Yongin-City KR
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