发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF |
摘要 |
A thin film transistor array panel includes a first substrate, a gate line disposed on the first substrate and includes a lower layer including titanium, a middle layer including a transparent conductive material, and an upper layer including copper, a pixel electrode disposed on the first substrate and includes a lower layer including titanium, and an upper layer including the transparent conductive material, a gate insulating layer disposed on the gate line and the pixel electrode, a semiconductor layer disposed on the gate insulating layer, a data line and a drain electrode disposed on the semiconductor layer, a passivation layer which covers the data line and the drain electrode, and a common electrode disposed on the passivation layer. |
申请公布号 |
US2015070612(A1) |
申请公布日期 |
2015.03.12 |
申请号 |
US201414171986 |
申请日期 |
2014.02.04 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
SEO O Sung;YIM Tae Kyung;KANG Hyun-Ho;KIM Hyung June |
分类号 |
H01L27/12;G02F1/1362 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
|
主权项 |
1. A thin film transistor array panel comprising:
a first substrate; a gate line which is disposed on the first substrate and includes:
a lower layer including titanium;a middle layer including a transparent conductive material; andan upper layer including copper, a pixel electrode which is disposed on the first substrate and includes:
a lower layer including titanium; andan upper layer including the transparent conductive material, a gate insulating layer disposed on the gate line and the pixel electrode; a semiconductor layer disposed on the gate insulating layer; a data line and a drain electrode disposed on the semiconductor layer; a passivation layer which covers the data line and the drain electrode; and a common electrode disposed on the passivation layer |
地址 |
Yongin-City KR |