COMBINATION GRINDING AFTER LASER (GAL) AND LASER ON-OFF FUNCTION TO INCREASE DIE STRENGTH

摘要

Consistent with an example embodiment, there is a method for preparing integrated circuit (IC) device die from a wafer substrate having a front-side with active devices and a back-side. The method comprises pre-grinding the backside of a wafer substrate to a thickness. The front-side of the wafer is mounted onto a protective foil. A laser is applied to the backside of the wafer, at first focus depth to define a secondary modification zone in saw lanes. To the backside of the wafer, a second laser process is applied, at a second focus depth shallower than that of the first focus depth, in the saw lanes to define a main modification zone, the secondary modification defined at a pre-determined location within active device boundaries, the active device boundaries defining an active device area. The backside of the wafer is ground down to a depth so as to remove the main modification zone. The IC device die are separated from one another by stretching the protective foil.

主权项

1. A method for preparing integrated circuit (IC) device die from a wafer substrate having a front-side with active devices and a back-side, the method comprising:
pre-grinding the backside of a wafer substrate to a thickness; mounting the front-side of the wafer onto protective foil; applying a laser to the backside of the wafer, at first focus depth to define a secondary modification zone in saw lanes, the secondary modification defined at a pre-determined location within active device boundaries, the active device boundaries defining an active device area; applying a laser to the backside of the wafer, at a second focus depth shallower than that of the first focus depth, in the saw lanes to define a main modification zone; grinding down the backside of the wafer to a depth so as to substantially remove the main modification zone; and stretching the protective foil to separate IC device die from one another.