SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

This SiC semiconductor device (1) is provided with: an SiC layer (11) containing a drift region (12) configuring a surface (11B) and a body region (13) configuring a portion of a surface (11A) and contacting the drift region (12); a drain electrode (50) that is electrically connected to a region at the surface (11B) side in the drift region (12); and a source electrode (40) that is electrically connected to the body region (13). The primary carrier moving between the drain electrode (50) and the source electrode (40) and passing through the drift region (12) is solely electrons. Z1/2 centers are introduced into the drift region (12) at a concentration of 1×1013 cm-3 to 1×1015 cm-3 inclusive.