发明名称 TRANSISTOR CIRCUIT
摘要 <p>In order to suppress an excessive increase of a potential at a cascode connection point, this cascode circuit is provided with a normally-on type transistor (11) and normally-off type transistors (121, 122), the first transistor (11) and the second transistor (121) are cascode-connected to each other, a source electrode of the transistor (121) and a source electrode of the transistor (122) are connected to each other, and a drain electrode of the transistor (121) and a drain electrode of the transistor (122) are connected to each other.</p>
申请公布号 WO2015033631(A1) 申请公布日期 2015.03.12
申请号 WO2014JP64775 申请日期 2014.06.03
申请人 SHARP KABUSHIKI KAISHA 发明人 OGINO, EIJI
分类号 H03K17/16;H03F1/22;H03K17/08;H03K17/10 主分类号 H03K17/16
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