| 摘要 |
<p>PROBLEM TO BE SOLVED: To propose a layout resistant to infiltration of chemicals into air gaps.SOLUTION: Adjacently arranged first and second memory blocks each have a plurality of bit lines arranged for extension in a first direction, a plurality of word lines arranged for extension in a second direction perpendicular thereto, and memory cells connected thereto correspondingly. The first memory block has a first selection gate connected to one end of the memory cells, and the second memory block has a second selection gate likewise. The first and second selection gates are arranged adjacently. An end portion at one end of the first selection gate has an L-shaped portion, and an end portion at one end of the second selection gate has a straight shaped portion. First contacts are arranged in the L-shaped portion of the first selection gate. A distance in the first direction from one end portion of the first selection gate to the other end portion thereof is equal to a width of the L-shaped portion of the first selection gate in the first direction.</p> |
