ION Implantation with Charge and Direction Control

摘要

The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.

主权项

1. A device comprising:
an emitter including a first electrode disposed on a dielectric layer and a second electrode disposed on the dielectric layer such that a gap exists between the first electrode and the second electrode; a first conductive structure having an open central region and disposed above the emitter such that an electron emitted from the gap when a voltage is applied to the first electrode and the second electrode passes through the open central region of the first conductive structure; and a second conductive structure having an open central region and disposed above the first conductive structure such that the open central region of the second conductive structure is directly above the open central region of the first conductive structure.