Power electronic switching device and assembly

摘要

A switching device having a substrate, a power semiconductor component, a connecting device, load connection devices and a pressure device. Substrate has electrically insulated conductor tracks. A power semiconductor component is arranged on a conductor track. Connecting device is formed as a film composite having an electrically conductive film and an electrically insulating film, and has first and second main surfaces. Switching device is connected in an internally circuit-conforming manner by connecting device. The pressure device has a pressure body with a first recess, a pressure element being arranged so that it projects out of the recess, wherein the pressure element presses onto a section of the second main surface of film composite and, in this case, the section is arranged within the surface of the power semiconductor component in projection along the normal direction of the power semiconductor component.

主权项

1. A power electronics switching device comprising:
a substrate; a power semiconductor component disposed on said substrate; a connecting device; load connection devices; and a pressure device; wherein said substrate has conductor tracks which are electrically insulated from one another, and the power semiconductor component is disposed on one of said conductor tracks and is cohesively connected to said one of said conductor tracks; wherein said connecting device is formed as a film composite having at least one electrically conductive film and an electrically insulating film, and therefore forms a first and a second main surface; wherein said switching device is connected in an internally circuit-conforming manner by said connecting device; wherein said pressure device has a pressure body with a first recess, a pressure element disposed such that it projects out of said recess; and wherein said pressure element presses onto a section of said second main surface of said film composite and, whereby said section is disposed within said surface of said power semiconductor component in projection along the normal direction of said power semiconductor component.