DELTA DOPING LAYER IN MOSFET SOURCE/DRAIN REGION

摘要

A transistor includes a gate terminal, a source terminal and a drain terminal. At least one of the source and drain terminals has a layered configuration that includes a terminal layer and an intervening layer. The terminal layer has a top surface and a bottom surface. The intervening layer is located within the terminal layer, between and spaced from the top and bottom surfaces, is oriented to be perpendicular to current flow, and is less than one tenth the thickness of the terminal layer. The terminal layer and the intervening layer include a common semiconductive compound and a common dopant, with a concentration of the dopant in the intervening layer being over ten times an average concentration of the dopant in the terminal layer.

主权项

1. A transistor comprising:
a gate terminal; a source terminal; and a drain terminal; wherein at least one of the source and drain terminals has a layered configuration including
a terminal layer having a top surface and a bottom surface, andan intervening layer that is located within the terminal layer, between and spaced from the top and bottom surfaces, and that is oriented to be perpendicular to current flow, and that is less than one tenth the thickness of the terminal layer; and wherein the terminal layer and the intervening layer include a common semiconductive compound and a common dopant, with a concentration of the dopant in the intervening layer being over ten times an average concentration of the dopant in the terminal layer.