发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR SUBSTRATE |
摘要 |
A thin film transistor substrate includes a base substrate, an active pattern provided on the base substrate and including a source electrode, a drain electrode and a channel between the source electrode and the drain electrode, a gate insulation layer provided on the active pattern, a gate electrode which is provided on the active pattern and overlaps the channel, a first contact pad disposed on at least one of the source electrode and the drain electrode and including a first metal, and a first non-conductive metal oxide layer on the base substrate to cover the gate electrode and including the first metal. |
申请公布号 |
US2015069401(A1) |
申请公布日期 |
2015.03.12 |
申请号 |
US201414152027 |
申请日期 |
2014.01.10 |
申请人 |
Samsung Display Co., LTD. |
发明人 |
NA Hyun-Jae;CHA Myoung-Geun;KHANG Yoon-Ho |
分类号 |
H01L29/786;H01L29/66 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
1. A thin film transistor substrate, comprising:
a base substrate; an active pattern provided on the base substrate and including a source electrode, a drain electrode and a channel between the source electrode and the drain electrode; a gate insulation layer provided on the active pattern; a gate electrode which is provided on the active pattern and overlaps the channel; a first contact pad disposed on at least one of the source electrode and the drain electrode and including a first metal; and a first non-conductive metal oxide layer on the base substrate to cover the gate electrode and including the first metal. |
地址 |
Yongin-City KR |