发明名称 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR SUBSTRATE
摘要 A thin film transistor substrate includes a base substrate, an active pattern provided on the base substrate and including a source electrode, a drain electrode and a channel between the source electrode and the drain electrode, a gate insulation layer provided on the active pattern, a gate electrode which is provided on the active pattern and overlaps the channel, a first contact pad disposed on at least one of the source electrode and the drain electrode and including a first metal, and a first non-conductive metal oxide layer on the base substrate to cover the gate electrode and including the first metal.
申请公布号 US2015069401(A1) 申请公布日期 2015.03.12
申请号 US201414152027 申请日期 2014.01.10
申请人 Samsung Display Co., LTD. 发明人 NA Hyun-Jae;CHA Myoung-Geun;KHANG Yoon-Ho
分类号 H01L29/786;H01L29/66 主分类号 H01L29/786
代理机构 代理人
主权项 1. A thin film transistor substrate, comprising: a base substrate; an active pattern provided on the base substrate and including a source electrode, a drain electrode and a channel between the source electrode and the drain electrode; a gate insulation layer provided on the active pattern; a gate electrode which is provided on the active pattern and overlaps the channel; a first contact pad disposed on at least one of the source electrode and the drain electrode and including a first metal; and a first non-conductive metal oxide layer on the base substrate to cover the gate electrode and including the first metal.
地址 Yongin-City KR