REPRODUCIBLE STEP-EDGE JOSEPHSON JUNCTION

摘要

An electronic component comprising a Josephson junction and a method for producing the same are proposed. The component comprises a substrate having at least one step edge in the surface thereof and a layer made of a high-temperature superconducting material disposed thereon, wherein this layer, at the step edge, has a grain boundary that forms the one or two weak links of the Josephson junction. On both sides of the step edge, the a and/or b crystal axes in the plane of the high-temperature superconducting layer are oriented perpendicularly to the grain boundary to within a deviation of no more than 10°, as a result of a texturing of the substrate and/or at least one buffer layer disposed between the substrate and the high-temperature superconducting layer. This can be technologically implemented, for example, by growing on the HTS layer by way of graphoepitaxy. By orienting the same crystal axis in each case perpendicularly to the step edge on both sides of the step edge, a maximal supercurrent can flow across the grain boundary induced by the step edge, and consequently across the Josephson junction.

主权项

1. A component comprising a Josephson junction, including a substrate having at least one step edge in the surface thereof and a functional layer made of a high-temperature superconducting material disposed thereon, wherein this layer, at the step edge, has a grain boundary that forms the weak link of the Josephson junction, wherein
on both sides of the step edge, the a and/or b crystal axes in the plane of the high-temperature superconducting functional layer are oriented perpendicularly to the grain boundary to within a deviation of no more than 10°, as a result of texturing of the substrate and/or at least one buffer layer disposed between the substrate and the high-temperature superconducting functional layer, wherein the texturing comprises elevations and/or depressions having an average height or depth between 1 nm and 10 nm, and preferably between 1 nm and 5 nm.