| 发明名称 |
DOPED, PASSIVATED GRAPHENE NANOMESH, METHOD OF MAKING THE DOPED, PASSIVATED GRAPHENE NANOMESH, AND SEMICONDUCTOR DEVICE INCLUDING THE DOPED, PASSIVATED GRAPHENE NANOMESH |
| 摘要 |
A doped, passivated graphene nanomesh includes a graphene nanomesh, a plurality of nanoholes formed in a graphene sheet, and a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes; a passivating element bonded to the plurality of carbon atoms; and a dopant bonded to the passivating element, the dopant comprising one of an electron-donating element for making the graphene nanomesh an n-doped graphene nanomesh, and an electron-accepting element for making the graphene nanomesh a p-doped graphene nanomesh. |
| 申请公布号 |
US2015069305(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201414542408 |
申请日期 |
2014.11.14 |
| 申请人 |
International Business Machines Corporation ;Egypt Nanotechnology Center |
发明人 |
Abou-Kandil Ahmed;Maarouf Ahmed;Martyna Glenn John;Mohamed Hisham;Newns Dennis M. |
| 分类号 |
H01L23/29;H01L23/31 |
主分类号 |
H01L23/29 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A doped, passivated graphene nanomesh, comprising:
a graphene nanomesh comprising a plurality of nanoholes formed in a graphene sheet, and a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes; a passivating element bonded to the plurality of carbon atoms; and a dopant bonded to the passivating element, the dopant comprising one of an electron-donating element for making the graphene nanomesh an n-doped graphene nanomesh, and an electron-accepting element for making the graphene nanomesh a p-doped graphene nanomesh. |
| 地址 |
Armonk NY US |
