发明名称 Methods of Forming Diodes
摘要 Some embodiments include methods of forming diodes in which a first electrode is formed to have a pedestal extending upwardly from a base. At least one layer is deposited along an undulating topography that extends across the pedestal and base, and a second electrode is formed over the least one layer. The first electrode, at least one layer, and second electrode together form a structure that conducts current between the first and second electrodes when voltage of one polarity is applied to the structure, and that inhibits current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the structure. Some embodiments include diodes having a first electrode that contains two or more projections extending upwardly from a base, having at least one layer over the first electrode, and having a second electrode over the at least one layer.
申请公布号 US2015072523(A1) 申请公布日期 2015.03.12
申请号 US201414543349 申请日期 2014.11.17
申请人 Micron Technology, Inc. 发明人 Sandhu Gurtej S.;Mouli Chandra
分类号 H01L29/66;H01L21/28 主分类号 H01L29/66
代理机构 代理人
主权项 1. A method of forming a diode, comprising: providing a substrate that comprises insulative material over an electrically conductive base; patterning an opening through the insulative material to the electrically conductive base to form one or more electrically conductive pedestals extending upwardly from the electrically conductive base; lining the opening with electrically conductive material, and patterning the lining into at least one of the one or more pedestals, said one or more pedestals having top surfaces, and having sidewall surfaces extending from the base to the top surfaces, the one or more pedestals defining a first electrode of the diode; and forming a second electrode in electrical communication with the first electrode to form the diode.
地址 Boise ID US