| 发明名称 |
SEMIPOLAR EMITTER |
| 摘要 |
A light emitting diode is disclosed in the form of a III-V compound semiconductor hetero-epitaxially grown on the (111) crystallographic surface of a silicon substrate. The light emitter consists of a multiple quantum well hetero-structure that has been realized in one or more crystallographic planes that are members of a set of semi-polar crystallographic planes of the III-V material. |
| 申请公布号 |
US2015069322(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201414252732 |
申请日期 |
2014.04.14 |
| 申请人 |
PAYNE Justin |
发明人 |
PAYNE Justin |
| 分类号 |
H01L33/00;H01L33/32;H01L33/18;H01L33/06 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light emitting diode (LED) comprised of a III-V compound semiconductor film stack where the electron—hole pair radiative recombination region is located in an electrically semi-polar crystal plane of the semiconductor film. |
| 地址 |
San Jose CA US |
