RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

摘要

The present disclosure provides a semiconductor structure which includes a conductive layer and a resistance configurable structure over the conductive layer. The resistance configurable structure includes a first electrode, a resistance configurable layer over the first electrode, and a second electrode over the resistance configurable layer. The first electrode has a first sidewall, a second sidewall, and a bottom surface on the conductive layer. A joint between the first sidewall and the second sidewall includes an electric field enhancement structure. The present disclosure also provides a method for manufacturing the above semiconductor structure, including patterning a hard mask on a conductive layer; forming a spacer around the hard mask; removing at least a portion of the hard mask; forming a conforming resistance configurable layer on the spacer; and forming a second conductive layer on the conforming resistance configurable layer.

主权项

1. A semiconductor structure, comprising:
a conductive layer; a resistance configurable structure over the conductive layer, the resistance configurable structure comprising:
a first electrode comprising a first sidewall, a second sidewall, and a bottom surface on the conductive layer, wherein a joint between the first sidewall and the second sidewall includes an electric field enhancement structure;a resistance configurable layer over the first electrode; anda second electrode over the resistance configurable layer.