RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

摘要

One embodiment in the present disclosure provides a resistor in a resistive random access memory (RRAM). The resistor includes a first electrode; a resistive layer on the first electrode; an electric field enhancement array in the resistive layer; and a second electrode on the resistive layer. The electric field enhancement array includes a plurality of electric field enhancers arranged in a same plane. One embodiment in the present disclosure provides a method of manufacturing a resistor structure in an RRAM. The method comprises (1) forming a first resistive layer on a first electrode; (2) forming a metal layer on the resistive layer; (3) patterning the metal layer to form a metal dot array on the resistive layer; and (4) forming a second electrode on the metal dot array. The metal dot array comprises a plurality of metal dots, and a distance between adjacent metal dots is less than 40 nm.

主权项

1. A resistor in a resistive random access memory (RRAM), comprising:
a first electrode; a resistive layer on the first electrode; an electric field enhancement array in the resistive layer; and a second electrode on the resistive layer; wherein the electric field enhancement array comprises a plurality of electric field enhancers arranged in a same plane, and wherein the electric field enhancer comprises at least a bent connecting two of a plurality of surfaces forming the electric field enhancer at a predetermined position, the bent having an angle of about or greater than 90 degrees.