发明名称 |
PHYSICALLY UNCLONABLE FUNCTION BASED ON THE INITIAL LOGICAL STATE OF MAGNETORESISTIVE RANDOM-ACCESS MEMORY |
摘要 |
<p>One feature pertains to a method for implementing a physically unclonable function (PUF). The method includes providing an array of magnetoresistive random access memory (MRAM) cells, where the MRAM cells are each configured to represent one of a first logical state and a second logical state. The array of MRAM cells are un-annealed and free from exposure to an external magnetic field oriented in a direction configured to initialize the MRAM cells to a single logical state of the first and second logical states. Consequently, each MRAM cell has a random initial logical state of the first and second logical states. The method further includes sending a challenge to the MRAM cell array that reads logical states of select MRAM cells of the array, and obtaining a response to the challenge from the MRAM cell array that includes the logical states of the selected MRAM cells of the array.</p> |
申请公布号 |
WO2015035043(A1) |
申请公布日期 |
2015.03.12 |
申请号 |
WO2014US54086 |
申请日期 |
2014.09.04 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
ZHU, XIAOCHUN;MILLENDORF, STEVEN M.;GUO, XU;JACOBSON, DAVID M.;LEE, KANGHO;KANG, SEUNG H.;NOWAK, MATTHEW MICHAEL |
分类号 |
G11C11/16;H04L9/08;H04L9/32 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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