| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of a high-speed operation, and to provide a semiconductor device having high reliability.SOLUTION: An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor, and a channel formation region, a source region and a drain region are formed in the semiconductor layer. The source region and the drain region are formed by performing an ion doping method or an ion implantation method of one or a plurality types of elements selected from rare gas or hydrogen into the semiconductor layer by using a channel protection layer as a mask. |
