Method For Forming Photo-Mask And OPC Method

摘要

A method for forming a photo-mask is provided. A first photo-mask pattern relating to a first line, an original second photo-mask pattern relating to a first via plug, and a third photo-mask pattern relating to a second line are provided. A first optical proximity correction (OPC) process is performed. A second OPC process is performed, comprising enlarging a width of the second photo-mask pattern along the first direction to form a revised second photo-resist pattern. A contour simulation process is performed to make sure the revised second photo-mask pattern is larger or equal to the original second-mask pattern. The first photo-mask pattern, the revised second photo-mask pattern, and the third photo-mask pattern are output. The present invention further provides an OPC method.

主权项

1. A method for forming a photo-mask, comprising:
providing a first photo-mask pattern relating to a first line, an original second photo-mask pattern relating to a first via plug, and a third photo-mask pattern relating to a second line, wherein the first metal line, the first via plug and the second line are disposed in sequence in a semiconductor structure, and the first line extends along a first direction, the second line extends along a second direction, the first via plug is disposed at the intersection of the first line and the second line; performing a first optical proximity correction (OPC) process by using a computer, comprising a comparing step and/or a modification step for the original second photo-mask pattern; performing a second OPC process, comprising enlarging a width of original the second photo-mask pattern along the first direction, wherein after the first OPC process and the second OPC process, the original the second photo-mask pattern becomes a revised second photo-resist pattern; after the second OPC process, performing a contour simulation process to make sure the revised second photo-mask pattern is larger or equal to the original second-mask pattern; and outputting the first photo-mask pattern to form a first photo-mask, outputting the revised second photo-mask pattern to form a second photo-mask, and outputting the third photo-mask pattern to form a third photo-mask.