| 摘要 |
According to one embodiment, a magnetic memory device includes a bit line, a source line, a magnetoresistance effect element between the bit line and the source line, and a nonlinear element provided between the bit line and the source line and connected in series to the magnetoresistance effect element. The nonlinear element has a voltage-current characteristic in which current increases until a voltage to be applied becomes a predetermined applied voltage, when current flowing through the nonlinear element is within a range not exceeding a predetermined current, and current increases within an applied voltage range lower than the predetermined applied voltage, when current flowing through the nonlinear element is within a range exceeding the predetermined current. |
