| 发明名称 |
ULTRA-THIN METAL WIRES FORMED THROUGH SELECTIVE DEPOSITION |
| 摘要 |
The embodiments of the present invention relate generally to the fabrication of integrated circuits, and more particularly to a structure and method for fabricating a pair of ultra-thin metal wires in an opening using a selective deposition process. |
| 申请公布号 |
US2015069625(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201314025047 |
申请日期 |
2013.09.12 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Li Juntao;Yang Chih-Chao;Yin Yunpeng |
| 分类号 |
H01L23/498;H01L21/768 |
主分类号 |
H01L23/498 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor device, the method comprising:
forming a pair of metal wires in an opening formed in a dielectric layer. |
| 地址 |
Armonk NY US |
