| 发明名称 |
MAGNETIC MEMORY AND MANUFACTURING METHOD THEREOF |
| 摘要 |
According to one embodiment, a magnetic memory includes a magnetoresistive effect element provided in a memory cell, the magnetoresistive effect element including a multilayer structure including a first magnetic layer, a second magnetic layer, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, a first electrode provided on an upper portion of the multilayer structure and including a first material, and a first film provided on a side surface of the first electrode and including a second material which is different from the first material of the first electrode. |
| 申请公布号 |
US2015069547(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201414200336 |
申请日期 |
2014.03.07 |
| 申请人 |
IWAYAMA Masayoshi;AIKAWA Hisanori |
发明人 |
IWAYAMA Masayoshi;AIKAWA Hisanori |
| 分类号 |
H01L43/02;H01L43/12 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic memory comprising:
a magnetoresistive effect element provided on a substrate, the magnetoresistive effect element including:
a multilayer structure including a first magnetic layer, a second magnetic layer, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer;a first electrode provided on an upper surface of the multilayer structure and formed of a first material; anda first film provided on a side surface of the first electrode, surrounding the first electrode, and formed of a second material which is different from the first material, wherein the second material is a noble metal. |
| 地址 |
Seoul KR |
