3D NON-VOLATILE STORAGE WITH WIDE BAND GAP TRANSISTOR DECODER

摘要

Disclosed herein are 3D stacked memory devices having WL select gates that comprises TFTs having bodies formed from a wide band gap semiconductor. The wide energy band gap semiconductor may be an oxide semiconductor, such as a metal oxide semiconductor. As examples, this could be an InGaZnO, InZnO, HfInZnO, or ZnInSnO body. The word lines may be formed from metal, such as tungsten. The 3D stacked memory device could have NAND strings. The TFTs may be formed in the word line layer. The TFT has a high drive current, a high breakdown voltage and low leakage current.

主权项

1. A 3D stacked non-volatile storage device, comprising:
a plurality of conductive word lines layers; a plurality of insulator layers alternating with the conductive word line layers in a stack; a plurality of non-volatile storage element strings, each non-volatile storage element string comprises a plurality of non-volatile storage elements, each of the non-volatile storage elements is associated with one of the plurality of word line layers; and a plurality of word line select gate transistors, an individual one of the word line select gate transistors comprising a thin film transistor having a body formed from a wide band gap semiconductor.