| 摘要 |
An in-cell active matrix OLED touch panel structure of narrow border includes first and second substrates, an OLED layer configured between the first and second substrates, first and second sensing electrode layers, and a thin film transistor layer. The first sensing electrode layer includes M first conductor blocks and N connection lines arranged in a first direction. The second sensing electrode layer includes N second conductor blocks arranged in a second direction. Each second conductor block makes use of a corresponding i-th connection line to be extended to one edge of the panel structure. The thin film transistor layer includes K gate lines and L source lines. The M first conductor blocks, the N connection lines, and the N second conductor blocks are disposed at positions corresponding to those of the K gate lines and L source lines of the thin film transistor layer. |
| 主权项 |
1. An in-cell active matrix OLED touch panel structure of narrow border, comprising:
a first substrate; a second substrate parallel to the first substrate; an OLED layer configured between the first substrate and the second substrates; a first sensing electrode layer arranged on one side of the second substrate facing the OLED layer and including M first conductor blocks and N connection lines arranged in a first direction for touch detection, where M and N are each a positive integer; a second sensing electrode layer arranged on one side of the first sensing electrode layer facing the OLED layer and including N second conductor blocks arranged in a second direction for touch detection, wherein each second conductor block makes use of a corresponding i-th connection line to be extended to one edge of the in-cell active matrix OLED touch panel structure, where i is a positive integer and 1≦i≦N; and a thin film transistor layer disposed at one side of the second sensing electrode layer facing the OLED layer, the thin film transistor layer including K gate lines and L source lines for driving corresponding pixel transistor and pixel capacitor based on a display pixel signal and a display driving signal, so as to perform a display operation, where K and L are each a positive integer, wherein the M first conductor blocks, the N connection lines, and the N second conductor blocks are disposed at positions corresponding to those of the K gate lines and L source lines of the thin film transistor layer. |
