| 摘要 |
Provided are a nanowire field-effect transistor and a method for manufacturing the same. The nanowire field-effect transistor can enable a source region to be positioned, with respect to an asymmetrical nanowire channel, adjacent to a region in which the diameter of the nanowire channel is large, can enable a drain region to be positioned adjacent to a region in which the diameter of the nanowire channel is small, can enable an ON current to be increased in a state in which a threshold voltage level is kept the same, and can enable the current drivability of a gate electrode to be improved.;Further, the method for manufacturing the nanowire field-effect transistor can enable an asymmetrical nanowire, the ends of which have mutually different diameters, to be formed, can enable a gate insulation film and a gate electrode enclosing a portion of the nanowire after introducing impurities to an end of the nanowire to be formed and either a source region or a drain region to be defined, can enable impurities to be introduced to the other end of the nanowire and the remaining one of the source region and the drain region to be defined, wherein the same kind of impurities are introduced to the source region and the drain region, and can enable the concentration of the introduced impurities to be adjusted in order to enable a device, which is optimized in accordance with the field in which the transistor is to be used, to be designed. |
