| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate periphery processing apparatus and method, capable of correctly controlling a processing width of a periphery of the surface of a substrate.SOLUTION: An apparatus includes: a spin chuck 1 for rotating a wafer W while holding it; and a shielding plate 10 disposed over the spin chuck 1. The shielding plate 10 has a circular member 32 at a position opposing the periphery on the upper surface of the wafer W. The circular member 32 has a wafer facing surface 45 facing the periphery on the upper surface of the wafer W, and a gas flow path 49 for communicating the inside space to the outside space. The circular member 32 also has gas supply means 18, 30 for feeding gas to the inside space of the circular member. When an etching liquid is supplied from a center axis nozzle 5 to the lower surface center of the wafer W, the etching liquid sneaks around the peripheral edge of the wafer W and reaches the upper surface thereof to form a liquid film contacting the wafer facing surface 45. This liquid film never sneaks from the vicinity of the inner periphery of the circular member 32 to the inside. |
