发明名称 |
PHYSICALLY UNCLONABLE FUNCTION BASED ON RESISTIVITY OF MAGNETORESISTIVE RANDOM-ACCESS MEMORY MAGNETIC TUNNEL JUNCTIONS |
摘要 |
One feature pertains to least one physically unclonable function based on an array of magnetoresistive random-access memory (MRAM) cells. A challenge to the array of MRAM cells may identify some of the cells to be used for the physically unclonable function. Each MRAM cell may include a plurality of magnetic tunnel junctions (MTJs), where the MTJs may exhibit distinct resistances due to manufacturing or fabrication variations. A response to the challenge may be obtained for each cell by using the resistance(s) of one or both of the MTJs for a cell to obtain a value that serves as the response for that cell. The responses for a plurality of cells may be at least partially mapped to provide a unique identifier for the array. The responses generated from the array of cells may serve as a physically unclonable function that may be used to uniquely identify an electronic device. |
申请公布号 |
US2015071432(A1) |
申请公布日期 |
2015.03.12 |
申请号 |
US201314077093 |
申请日期 |
2013.11.11 |
申请人 |
QUALCOMM Incorporated |
发明人 |
Zhu Xiaochun;Millendorf Steven M.;Guo Xu;Jacobson David Merrill;Lee Kangho;Kang Seung H.;Nowak Matthew Michael |
分类号 |
G11C11/16;H04L9/30 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
issuing a challenge to an array of magnetoresistive random-access memory (MRAM) cells including a plurality of magnetic tunnel junctions, the challenge including a plurality of MRAM cell addresses of at least some of the magnetic tunnel junctions; and obtaining a response to the challenge by ascertaining a resistance of the magnetic tunnel junctions to generate at least a partial map of the array. |
地址 |
San Diego CA US |