发明名称 |
HIGH ENERGY SEMICONDUCTOR LASER |
摘要 |
A high energy semiconductor laser capable of high optical efficiency includes a master oscillator coupled to a plurality of slave oscillators, each producing a laser beam that is substantially at the same wavelength as the output beam from the master oscillator. The outputs of the slave oscillators are then coherently combined to a single monochromatic beam having an optical power which is substantially greater than that of beam output from the master oscillator. The slave oscillators can be configured as ring resonators. A suitable ring oscillator can be built by arranging one or more semiconductor diode laser gain media, two or more reflecting mirrors, and at least one semireflective mirror in a ring configuration. A suitable ring oscillator can also be built by machining a solid block to include one or more semiconductor diode laser high gain regions. |
申请公布号 |
US2015071321(A1) |
申请公布日期 |
2015.03.12 |
申请号 |
US201012938727 |
申请日期 |
2010.11.03 |
申请人 |
Moshchansky-Livingston Peter;Hutchin Richard A. |
发明人 |
Moshchansky-Livingston Peter;Hutchin Richard A. |
分类号 |
H01S5/10 |
主分类号 |
H01S5/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
Palos Verdes Estates CA US |