发明名称 HIGH ENERGY SEMICONDUCTOR LASER
摘要 A high energy semiconductor laser capable of high optical efficiency includes a master oscillator coupled to a plurality of slave oscillators, each producing a laser beam that is substantially at the same wavelength as the output beam from the master oscillator. The outputs of the slave oscillators are then coherently combined to a single monochromatic beam having an optical power which is substantially greater than that of beam output from the master oscillator. The slave oscillators can be configured as ring resonators. A suitable ring oscillator can be built by arranging one or more semiconductor diode laser gain media, two or more reflecting mirrors, and at least one semireflective mirror in a ring configuration. A suitable ring oscillator can also be built by machining a solid block to include one or more semiconductor diode laser high gain regions.
申请公布号 US2015071321(A1) 申请公布日期 2015.03.12
申请号 US201012938727 申请日期 2010.11.03
申请人 Moshchansky-Livingston Peter;Hutchin Richard A. 发明人 Moshchansky-Livingston Peter;Hutchin Richard A.
分类号 H01S5/10 主分类号 H01S5/10
代理机构 代理人
主权项
地址 Palos Verdes Estates CA US