| 发明名称 |
INTERPOSER WAFER AND METHOD OF MANUFACTURING SAME |
| 摘要 |
In one embodiment, a method of manufacturing an interposer wafer includes forming a first hole having a first depth on a first main surface of a semiconductor wafer. The method further includes forming a second hole having a second depth on the first main surface of the semiconductor wafer before forming the first hole or after forming the first hole, the second depth being shallower than the first depth. The method further includes forming an electrode in the first hole. The method further includes forming an alignment mark in the second hole. |
| 申请公布号 |
US2015069627(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201414213573 |
申请日期 |
2014.03.14 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KOJIMA Kenji |
| 分类号 |
H01L21/768;H01L23/00;H01L23/538 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing an interposer wafer, comprising:
forming a first hole having a first depth on a first main surface of a semiconductor wafer; forming a second hole having a second depth on the first main surface of the semiconductor wafer before forming the first hole or after forming the first hole, the second depth being shallower than the first depth; forming an electrode in the first hole; and forming an alignment mark in the second hole. |
| 地址 |
Tokyo JP |
