发明名称 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
摘要 A thin film transistor substrate includes a substrate, a data line disposed on the substrate and which extends substantially in a predetermined direction, a light blocking layer disposed on the substrate and including a metal oxide including zinc manganese oxide, zinc cadmium oxide, zinc phosphorus oxide or zinc tin oxide, a gate electrode disposed on the light blocking layer, a signal electrode including a source electrode and a drain electrode spaced apart from the source electrode, where the source electrode is connected to the data line, and a semiconductor pattern disposed between the source electrode and the drain electrode.
申请公布号 US2015069382(A1) 申请公布日期 2015.03.12
申请号 US201414467848 申请日期 2014.08.25
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 AHN Byung-Du;LIM Ji-Hun;PARK Jin-Hyun;KIM Hyun-Jae
分类号 H01L29/786;H01L27/12 主分类号 H01L29/786
代理机构 代理人
主权项 1. A thin film transistor substrate, comprising: a substrate; a data line disposed on the substrate and which extends substantially in a predetermined direction; a light blocking layer disposed on the substrate and comprising a metal oxide comprising zinc manganese oxide, zinc cadmium oxide, zinc phosphorus oxide, zinc tin oxide or a combination thereof; a gate electrode disposed on the light blocking layer; a signal electrode comprising a source electrode, and a drain electrode spaced apart from the source electrode, wherein the source electrode is connected to the data line; and a semiconductor pattern disposed between the source electrode and the drain electrode.
地址 Yongin-City KR