发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A thin film transistor substrate includes a substrate, a data line disposed on the substrate and which extends substantially in a predetermined direction, a light blocking layer disposed on the substrate and including a metal oxide including zinc manganese oxide, zinc cadmium oxide, zinc phosphorus oxide or zinc tin oxide, a gate electrode disposed on the light blocking layer, a signal electrode including a source electrode and a drain electrode spaced apart from the source electrode, where the source electrode is connected to the data line, and a semiconductor pattern disposed between the source electrode and the drain electrode. |
申请公布号 |
US2015069382(A1) |
申请公布日期 |
2015.03.12 |
申请号 |
US201414467848 |
申请日期 |
2014.08.25 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
AHN Byung-Du;LIM Ji-Hun;PARK Jin-Hyun;KIM Hyun-Jae |
分类号 |
H01L29/786;H01L27/12 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
|
主权项 |
1. A thin film transistor substrate, comprising:
a substrate; a data line disposed on the substrate and which extends substantially in a predetermined direction; a light blocking layer disposed on the substrate and comprising a metal oxide comprising zinc manganese oxide, zinc cadmium oxide, zinc phosphorus oxide, zinc tin oxide or a combination thereof; a gate electrode disposed on the light blocking layer; a signal electrode comprising a source electrode, and a drain electrode spaced apart from the source electrode, wherein the source electrode is connected to the data line; and a semiconductor pattern disposed between the source electrode and the drain electrode. |
地址 |
Yongin-City KR |